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DT
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
100
r
DS(on)
(Ω)
0.030 at V
GS
= 10 V
0.034 at V
GS
= 6 V
I
D
(A)
40
37.5
FEATURES
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
• Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
D
TO-252
G
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
DM
I
AR
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
E
AR
P
D
T
J
, T
stg
Limit
100
± 20
40
23
75
35
61
107
b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
(PCB Mount)
c
Symbol
R
thJA
R
thJC
Limit
40
1.4
Unit
°C/W
1
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