D
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THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.0
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C, I
S
= 4 A, V
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
=
20
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.7 A
b
V
DS
= 100 V, I
D
= 3.7 A
b
600
-
2.0
-
-
-
-
3.7
-
0.70
-
-
-
-
-
-
-
-
4.0
± 100
100
500
1.2
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
-
-
-
-
1100
140
15
-
-
-
12
20
27
17
4.5
7.5
-
-
-
39
10
19
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 4 A, V
DS
= 360 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 300 V, I
D
= 4 A
R
g
= 9.1
,
R
D
= 47, see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
b
-
-
-
440
2.1
4.0
A
25
1.5
680
3.2
V
ns
μC
G
S
GS
= 0 V
b
T
J
= 25 °C, I
F
= 4 A, dI/dt = 100 A/μs
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
2
DINTEK [ DinTek Semiconductor Co,.Ltd ]
