D
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N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.0051 at V
GS
= 10 V
0.0063 at V
GS
= 4.5 V
I
D
(A)
50
d
50
d
Q
g
(Typ.)
21.7
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D
TO-252
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
G
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
± 20
50
d
50
d
100
40
80
59.5
b
2.7
- 55 to 150
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R
thJA
R
thJC
Limit
46
2.1
Unit
°C/W
1
DINTEK [ DinTek Semiconductor Co,.Ltd ]
