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BC807-40W 参数 Datasheet PDF下载

BC807-40W图片预览
型号: BC807-40W
PDF下载: 下载PDF文件 查看货源
内容描述: PNP表面贴装晶体管 [PNP SURFACE MOUNT TRANSISTOR]
分类和应用: 晶体晶体管开关光电二极管IOT
文件页数/大小: 3 页 / 356 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号BC807-40W的Datasheet PDF文件第2页浏览型号BC807-40W的Datasheet PDF文件第3页  
BC807-16W / -25W / -40W
Lead-free Green
PNP SURFACE MOUNT TRANSISTOR
Features
·
·
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·
·
·
·
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·
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Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary NPN Types Available (BC817-xxW)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Dim
A
C
B C
SOT-323
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
A
B
C
D
E
G
H
M
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic. "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Pin Connections: See Diagram
Marking:
P/N
BC807-16W
BC807-25W
BC807-40W
Marking
K5A
K5B
K5C
K
B
G
H
E
0.65 Nominal
J
K
L
M
a
J
D
E
L
All Dimensions in mm
·
·
Ordering & Date Code Information: See Page 3
Approximate Weight: 0.006 grams
@T
A
= 25°C unless otherwise specified
Symbol
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qJA
T
j
, T
STG
Value
-45
-5.0
-500
-1000
-1000
200
625
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C
Maximum Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Characteristic
Power Dissipation at T
SB
= 50°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
Min
100
160
250
60
100
170
100
Typ
Max
250
400
600
-0.7
-1.2
-100
-5.0
-100
12
Unit
Test Condition
V
CE
= -1.0V, I
C
= -100mA
V
CE
= -1.0V, I
C
= -300mA
Characteristic (Note 4)
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
V
CE(SAT)
V
BE
I
CES
I
EBO
f
T
C
CBO
V
V
nA
µA
nA
MHz
pF
I
C
= -500mA, I
B
= -50mA
V
CE
= -1.0V, I
C
= -300mA
V
CE
= -45V
V
CE
= -25V, T
j
= 150°C
V
EB
= -4.0V
V
CE
= -5.0V, I
C
= -10mA,
f = 50MHz
V
CB
= -10V, f = 1.0MHz
1. No purposefully added lead.
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30577 Rev. 5 - 2
1 of 3
www.diodes.com
BC807-16W / -25W / -40W
ã
Diodes Incorporated