Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
Min
80
50
30
65
45
30
6
5
—
—
—
—
—
—
—
—
—
—
—
—
110
200
420
—
—
580
—
—
—
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
220
330
600
2.7
4.5
8.7
18
30
60
-4
1.5x10
-4
2x10
-4
3x10
180
290
520
90
200
700
900
660
—
—
—
—
—
—
300
3.0
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
220
450
800
250
600
—
700
770
15
15
15
15
5.0
—
—
10
Unit
V
Test Condition
I
C
= 10μA, I
B
= 0
B
Characteristic
Collector-Base Breakdown Voltage (Note 4)
BC846
BC847
BC848
Collector-Emitter Breakdown Voltage (Note 4)
BC846
BC847
BC848
Emitter-Base Breakdown Voltage
BC846, BC847
(Note 3)
BC848
H-Parameters
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
A
Current Gain Group
B
C
DC Current Gain
Current Gain Group A
B
(Note 4)
C
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Voltage (Note 4)
Collector-Cutoff Current (Note 4)
BC846
BC847
BC848
V
(BR)CEO
V
(BR)EBO
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CES
I
CES
I
CES
I
CBO
I
CBO
f
T
C
CBO
NF
V
V
—
—
—
kΩ
kΩ
kΩ
µS
µS
µS
—
—
—
—
mV
mV
mV
nA
nA
nA
nA
µA
MHz
pF
dB
I
C
= 10mA, I
B
= 0
B
I
E
= 1μA, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA,
f = 1.0kHz
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 80V
V
CE
= 50V
V
CE
= 30V
V
CB
= 40V
V
CB
= 30V, T
A
= 150°C
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 200µA,
R
S
= 2.0kΩ,
f = 1.0kHz,
Δf
= 200Hz
B
B
B
B
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DS11108 Rev. 21 - 2
2 of 4
BC846A-BC848C
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
