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BCP55 参数 Datasheet PDF下载

BCP55图片预览
型号: BCP55
PDF下载: 下载PDF文件 查看货源
内容描述: 采用SOT223 NPN硅平面中功率晶体管 [NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223]
分类和应用: 晶体晶体管开关光电二极管局域网
文件页数/大小: 7 页 / 124 K
品牌: DIODES [ DIODES INCORPORATED ]
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BCP 54 / 55 / 56
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
0.4
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1.0
0.3
0.8
0.6
0.2
0.4
0.1
0.2
0
0.0001
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
140
1.0
120
CAPACITANCE (pF)
100
80
60
40
20
0.8
0.6
0.4
0.2
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics
300
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
250
200
150
100
V
CE
= 5V
f = 100MHz
50
0
0
20
40
60
80
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current
BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
5 of 7
June 2011
© Diodes Incorporated