BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Features
·
·
·
·
High Input Impedance
Fast Switching Speed
CMOS Logic Compatible Input
No Thermal Runaway or Secondary
Breakdown
E
A
B
Dim
A
B
C
D
E
TO-92
Min
4.45
4.46
12.7
0.41
3.43
2.42
1.14
Max
4.70
4.70
—
0.63
3.68
2.67
1.40
Mechanical Data
·
·
·
·
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Pin Connection: See Diagram
Weight: 0.18 grams (approx.)
D
BOTTOM
VIEW
C
G
H
SG D
All Dimensions in mm
H
G
H
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
V
DGS
V
GS
I
D
P
d
T
j
T
j
, T
STG
Value
60
60
±20
300
830
150
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @T
C
= 25°C (Note 1)
Junction Temperature
Operating and Storage Temperature Range
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
I
F
V
F
Value
0.50
0.85
Unit
A
V
Maximum Forward Current (continuous)
Forward Voltage Drop (typ.) @ V
GS
= 0, I
F
= 0.5A, T
j
= 25°C
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain-Cutoff Current
Drain-Source ON Resistance
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
r
DS (ON)
R
qJA
g
FS
C
iss
t
on
t
off
Min
60
0.8
—
—
—
—
—
—
—
Typ
90
1.0
—
—
3.5
—
200
60
5.0
15
Max
—
3.0
10
0.5
5.0
150
—
—
—
Unit
V
V
nA
µA
W
K/W
mm
pF
ns
Test Condition
I
D
= 100µA, V
GS
= 0
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 15V, V
DS
= 0
V
DS
= 25V, V
GS
= 0
V
GS
= 10V, I
D
= 0.2mA
Note 1
V
DS
= 10V, I
D
= 0.2A, f = 1MHz
V
DS
= 10V, V
GS
= 0, f =1.0MHz
V
GS
= 10V, V
DS
= 10V,
R
D
= 100W
Thermal Resistance, Junction to Ambient Air
Forward Transconductance
Input Capacitance
Turn On Time
Turn Off Time
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
DS21802 Rev. D-3
1 of 2
BS170
DIODES [ DIODES INCORPORATED ]
