NEW PRODUCT
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
Note:
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSSF
V
GS(th)
R
DS (ON)
g
FS
V
SD
C
iss
C
oss
C
rss
t
r
t
f
t
D(ON)
t
D(OFF)
Min
100
¾
¾
0.8
¾
¾
80
¾
¾
¾
¾
¾
¾
¾
¾
Typ
¾
¾
¾
1.4
¾
¾
370
0.84
29
10
2
¾
¾
¾
¾
Max
¾
1.0
10
50
2.0
6.0
10
¾
1.3
60
15
6
8
16
8
13
Unit
V
µA
nA
nA
V
W
mS
V
pF
pF
pF
ns
ns
ns
ns
V
DD
= 30V, I
D
= 0.28A,
R
GEN
= 50W, V
GS
= 10V
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 250mA
V
DS
= 100V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 0.17A
V
GS
= 4.5V, I
D
= 0.17A
V
DS
= 10V, I
D
= 0.17A, f = 1.0KHz
V
GS
= 0V, I
S
= 0.34A
3. Short duration test pulse used to minimize self-heating effect.
0.7
0.6
V
GS
= 10, 7, 6, 5V
0.5
V
GS
= 4V
0.4
0.3
0.2
0.1
V
GS
= 3V
2.4
I
D
, DRAIN-SOURCE CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.0
V
GS
= 3V
1.6
V
GS
= 4V
1.2
V
GS
= 5, 6, 7, 10V
0.8
0
0
2
4
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
1
5
0.1
0.2
0.3
0.4
0.5
0.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
DS30366 Rev. 6 - 2
2 of 4
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