BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
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Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Mechanical Data
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SOT-23
NEW PRODUCT
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
Gate
G
Source
S
TOP VIEW
Equivalent Circuit
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DM
Value
100
100
±20
170
680
Units
V
V
V
mA
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
≤
20KΩ
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Continuous
Pulsed
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
d
R
θ
JA
T
j
, T
STG
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSSF
V
GS(th)
R
DS (ON)
g
FS
V
SD
C
iss
C
oss
C
rss
t
r
t
f
t
D(ON)
t
D(OFF)
Min
100
⎯
⎯
0.8
⎯
⎯
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
1.4
⎯
⎯
370
0.84
29
10
2
⎯
⎯
⎯
⎯
Max
⎯
1.0
10
50
2.0
6.0
10
⎯
1.3
60
15
6
8
16
8
13
Unit
V
µA
nA
nA
V
Ω
mS
V
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 0.17A
V
GS
= 4.5V, I
D
= 0.17A
V
DS
= 10V, I
D
= 0.17A, f = 1.0KHz
V
GS
= 0V, I
S
= 0.34A
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.28A,
R
GEN
= 50Ω, V
GS
= 10V
Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead. Halogen and Antimony Free.
Short duration pulse test used to minimize self-heating effect.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
BSS123
Document number: DS30366 Rev.8 - 2
1 of 3
www.diodes.com
May 2008
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
