SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* 25 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent h
FE
specified up to 6A
COMPLEMENTARY TYPE
PARTMARKING DETAIL
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
SYMBOL MIN.
35
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
70
100
75
15
150
0.12
0.40
0.9
0.8
200
200
150
50
240
25
55
300
25
5
0.1
10
0.1
0.3
0.6
1.25
1.0
300
MHz
50
pF
ns
ns
FZT749
FZT649
C
E
C
B
FZT649
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
35
25
5
8
3
2
-55 to +150
UNIT
V
V
V
µ
A
µ
A
µ
A
ABSOLUTE MAXIMUM RATINGS.
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=30V
V
CB
=30V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=300mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=2V*
I
C
=50mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
V
V
V
V
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
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