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MBR760 参数 Datasheet PDF下载

MBR760图片预览
型号: MBR760
PDF下载: 下载PDF文件 查看货源
内容描述: 7.5A肖特基整流器 [7.5A SCHOTTKY BARRIER RECTIFIER]
分类和应用: 二极管瞄准线功效局域网
文件页数/大小: 3 页 / 63 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号MBR760的Datasheet PDF文件第2页浏览型号MBR760的Datasheet PDF文件第3页  
MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 4)
K
C
D
A
L
B
M
TO-220AC
Dim
A
B
C
D
E
G
E
G
J
R
P
Pin 1 +
Pin 2 -
+
Case
Min
14.48
10.00
2.54
5.90
2.80
12.70
0.69
3.54
4.07
1.15
0.30
2.04
4.83
Max
15.75
10.40
3.43
6.40
3.93
14.27
0.93
3.78
4.82
1.39
0.50
2.79
5.33
Mechanical Data
·
·
·
·
·
·
·
Case: TO-220AC
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 2.3 grams (approx.)
Pin 1
Pin 2
J
K
L
M
N
P
R
N
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
C
= 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
(Note 3)
@ I
F
= 7.5A, T
J
= 25°C
@ I
F
= 7.5A, T
J
= 125°C
@ I
F
= 15A, T
J
= 25°C
@ I
F
= 15A, T
J
= 125°C
@ T
J
= 25°C
@ T
J
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
MBR
730
30
21
@ T
A
= 25°C unless otherwise specified
MBR
735
35
24.5
MBR
740
40
28
7.5
150
¾
0.57
0.84
0.72
0.1
15
400
3.5
MBR
745
45
31.5
MBR
750
50
35
MBR
760
60
42
Unit
V
V
A
A
V
FM
0.75
0.65
¾
¾
0.5
50
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Total Capacitance (Note 2)
I
RM
C
T
R
qJc
dV/dt
T
j
T
STG
mA
pF
°C/W
V/ms
°C
°C
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V
R
)
Operating Temperature Range
Storage Temperature Range
Notes:
10,000
-55 to +150
-55 to +175
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Short duration test pulse used to minimize self-heating effect.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
DS23007 Rev. 9 - 2
1 of 3
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MBR730-MBR760
ã
Diodes Incorporated