MJD340
HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR
Features
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Epitaxial Planar Die Construction
High Collector-EmitterVoltage
Ideally Suited for Automated Assembly Processes
Ideal for Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
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2,4
3
NEW PRODUCT
Case: DPAK
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.34 grams (approximate)
COLLECTOR
1
BASE
Top View
4
2
1
3
EMITTER
Device Schematic
Pin Out Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
300
300
3
0.5
0.75
Unit
V
V
V
A
A
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation @T
C
= 25°C
Thermal Resistance, Junction to Case
Power Dissipation @T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JC
P
D
R
θ
JA
T
J
, T
STG
Value
15
8.33
1.56
80
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(SUS)CEO
I
CBO
I
EBO
h
FE
Min
300
⎯
⎯
30
Typ
⎯
⎯
⎯
⎯
Max
⎯
100
100
240
Unit
V
μA
μA
⎯
Test Condition
I
C
= 1mA, I
B
= 0
V
CB
= 300V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
MJD340
Document number: DS31609 Rev. 2 - 2
1 of 4
December 2008
© Diodes Incorporated