MMBTA13 / MMBTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Types Available (MMBTA63
/MMBTA64)
Ideal for Medium Power Amplification and Switching
High Current Gain
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
A
C
B
B
E
TOP VIEW
SOT-23
Dim
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
B
C
D
E
G
H
J
K
E
•
D
G
H
K
J
L
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMBTA13 Marking (See Page 3): K2D, K3D
MMBTA14 Marking (See Page 3): K3D
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
M
C
L
M
α
All Dimensions in mm
B
E
•
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
30
30
10
300
300
417
-55 to +150
Unit
V
V
V
mA
mW
°CW
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CEO
I
CBO
I
EBO
MMBTA13
MMBTA14
MMBTA13
MMBTA14
Min
30
⎯
⎯
5,000
10,000
10,000
20,000
⎯
⎯
Max
⎯
100
100
Unit
V
nA
nA
Test Condition
I
C
= 100μA V
BE
= 0V
V
CB
= 30V, I
E
= 0
V
EB
= 10V, I
C
= 0
I
C
= 10mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 100μA
I
C
= 100mA, V
CE
= 5.0V
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 5.0V, I
C
= 10mA, f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
f
T
⎯
1.5
2.0
⎯
V
V
pF
pF
MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Note:
8.0 Typical
15 Typical
125
⎯
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS30047 Rev. 10 - 2
1 of 3
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MMBTA13 / MMBTA14
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
