2N4402, 2N4403
PNP
Version 2004-01-20
General Purpose Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1=C 2=B 3=E
625 mW
TO-92
(10D3)
0.18 g
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25°C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CE0
- V
CE0
- V
EB0
P
tot
- I
C
T
j
T
S
Grenzwerte (T
A
= 25°C)
2N4402, 2N4403
40 V
40 V
5V
625 mW
1
)
600 mA
150°C
- 55…+ 150°C
Characteristics (T
j
= 25°C)
Min.
Collector saturation volt. – Kollektor-Sättigungsspannung
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
Collector cutoff current – Kollektorreststrom
- V
CE
= 35 V, - V
EB
= 0.4 V
Emitter cutoff current – Emitterreststrom
- V
CE
= 35 V, - V
EB
= 0.4 V
- I
EBV
–
- I
CBV
–
- V
CEsat
- V
CEsat
- V
BEsat
- V
BEsat
–
–
750 mV
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
Max.
400 mV
750 mV
950 mV
1.3 V
100 nA
100 nA
Base saturation voltage – Basis-Sättigungsspannung
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
36
DIOTEC [ DIOTEC SEMICONDUCTOR ]
