2N7000
2N7000
N
Version 2011-02-16
Power dissipation
Verlustleistung
S GD
N-Channel Enhancement Mode Field Effect Transistor
N-Kanal Feldeffekt Transistor – Anreicherungstyp
N
350 mW
TO-92
(10D3)
0.18 g
16
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
9
18
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
Drain-Source-voltage – Drain-Source-Spannung
Drain-Gate-voltage – Drain-Gate-Spannung
Gate-Source-voltage – Gate-Source-Spannung
Power dissipation – Verlustleistung
Drain current continuos – Drainstrom (dc)
Peak Drain current – Drain-Spitzenstrom
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
R
GS
≤ 1 MΩ
dc
t
p
< 50 µs
V
DSS
V
DGR
V
GSS
V
GSS
P
tot
I
D
I
DM
T
j
T
S
Grenzwerte (T
A
= 25°C)
2N7000
60 V
60 V
± 20 V
± 40 V
350 mW
200 mA
500 mA
150°C
-55…+150°C
© Diotec Semiconductor AG
http://www.diotec.com/
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