BC327 / BC328
Characteristics (T
j
= 25°C)
Min.
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 1 V, - I
C
= 300 mA,
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- V
CE
= 45 V, (B-E short)
- V
CE
= 25 V, (B-E short)
- V
CE
= 45 V, T
j
= 125°C, (B-E short)
- V
CE
= 25 V, T
j
= 125°C, (B-E short)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
C
CBO
R
thA
–
12 pF
< 200 K/W
1
)
BC337 / BC338
BC327-16
BC327-25
BC327-40
BC328-16
BC328-25
BC328-40
–
f
T
–
100 MHz
–
BC327
BC328
BC327
BC328
- I
CES
- I
CES
- I
CES
- I
CES
–
–
–
–
2 nA
2 nA
–
–
100 nA
100 nA
10 µA
10 µA
- V
BE
–
–
1.2 V
Kennwerte (T
j
= 25°C)
Typ.
Max.
120
[%]
100
80
60
40
20
P
tot
0
0
T
A
50
100
150
[°C]
Power dissipation versus ambient temperature
1
)
Verlustleistung in Abh. von d. Umgebungstemp.
1
)
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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2
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