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BC549 参数 Datasheet PDF下载

BC549图片预览
型号: BC549
PDF下载: 下载PDF文件 查看货源
内容描述: 通用硅外延平面晶体管 [General Purpose Si-Epitaxial Planar Transistors]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 2 页 / 100 K
品牌: DIOTEC [ DIOTEC SEMICONDUCTOR ]
 浏览型号BC549的Datasheet PDF文件第2页  
BC546 ... BC549
BC546 ... BC549
NPN
Version 2006-05-31
Power dissipation – Verlustleistung
CBE
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
500 mW
TO-92
(10D3)
0.18 g
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
18
9
16
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
BC546
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (T
j
= 25°C)
Group A
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 5 V, I
C
= 10 µA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 100 mA
h-Parameters at/bei V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverser voltage transfer ratio
Spannungsrückwirkung
h
fe
h
ie
h
oe
h
re
typ. 220
1.6 ... 4.5 kΩ
18 < 30 µS
typ. 1.5*10
-4
h
FE
h
FE
h
FE
typ. 90
110 ... 220
typ. 120
E-B short
B open
E open
C open
V
CES
V
CEO
V
CBO
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
85 V
65 V
80 V
Grenzwerte (T
A
= 25°C)
BC547
50 V
45 V
50 V
5V
500 mW
1
)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Kennwerte (T
j
= 25°C)
Group B
typ. 150
200 ... 450
typ. 200
Group C
typ. 270
420 ... 800
typ. 400
BC548/549
30 V
30 V
30 V
typ. 330
3.2 ...8.5 kΩ
30 < 60 µS
typ. 2*10
-4
typ. 600
6 ... 15 kΩ
60 < 110 µS
typ. 3*10
-4
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
1