BC556, A/B
BC557, A/B/C
BC558, A/B/C
PNP General Purpose Transistor
2
BASE
COLLECTOR
3
TO-92
1
1
EMITTER
2
3
Maximum Ratings
( TA=25
℃
unless otherwise noted)
C
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
VECO
V CBO
VEBO
lC
BC556
-65
-80
-5
BC557
-45
-50
-5
100
BC558
-30
-30
-5
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation
Alumina Substrate, TA = 25
℃
C
BC556
BC557
BC558
BC556
BC557
BC558
Symbol
PD
Max
625
Unit
mW/
℃
C
Junction and Storage, Temperature
TJ, Tstg
-55 to +150
℃
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 2 mAdc. lB =0)
Collector-Base Breakdown Voltage
(lC = 100
mAdc.
lE =0)
Emitter-Base Breakdown Voltage
(lE = 100
mAdc.
lC=0)
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
V
(BR)CEO
-65
-45
-30
-80
-50
-30
Vdc
V
(BR)CBO
Vdc
V
(BR)EBO
-5
Vdc
WE ITR O N
http://www.weitron.com.tw
1/5
26-Apr-05
DIOTEC [ DIOTEC SEMICONDUCTOR ]
