General Purpose Transistors
BC 807W / BC 808W
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
0.7 V
1.3 V
1.2 V
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA
- VCEsat
–
–
–
–
–
–
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
- VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA
- VBE
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
- ICB0
- ICB0
–
–
–
–
100 nA
5 ꢀA
IE = 0, - VCB = 20 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
- IEB0
fT
–
–
100 nA
–
80 MHz 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
10 pF
–
Thermal resistance junction to ambient air
RthA
620 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 817W / BC 818W
BC 807-16W = 5A BC 807-25W = 5B BC 807-40W = 5C
BC 807W = 5D
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstärkungsgruppen pro Typ
BC 808-16W = 5E BC 808-25W = 5F
BC 808W = 5H
BC 808-40W = 5G
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
5
DIOTEC [ DIOTEC SEMICONDUCTOR ]
