BC846S ... BC848S
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Dimensions / Maße in mm
2
±0.1
6.5
6
Version 2004-04-09
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
310 mW
SOT-363
0.01 g
6.5
5
4
0.9
±0.1
1.25
±0.1
±0.1
2.1
Type
Code
1
2
3
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2.4
6 = C1
1 = E1
5 = B2
2 = B1
4 = E2
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
BC846S
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
65 V
80 V
Grenzwerte (T
A
= 25
/
C)
BC847S
45 V
50 V
6V
310 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65…+ 150
/
C
BC848S
30 V
30 V
5V
Characteristics (T
j
= 25
/
C)
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 5 V, I
C
= 10
:
A
V
CE
= 5 V, I
C
= 2 mA
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
h
fe
h
ie
h
oe
h
re
h
FE
h
FE
Kennwerte (T
j
= 25
/
C)
typ. 90 ... 270
110 ... 800
typ. 220 ... 600
1.6 ... 15 k
S
18 ...110
:
S
typ.1.5 ... 3 *10
-4
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
1
12
DIOTEC [ DIOTEC SEMICONDUCTOR ]
