BL
Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
BC846W/BC847W/BC848W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Symbol
Test conditions
I
C
=100μA,I
E
=0
V
(BR)CBO
I
C
=1mA,I
B
=0
V
(BR)CEO
I
E
=100μA,I
C
=0
V
(BR)EBO
I
CBO
I
EBO
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V,I
C
=10μA
BC846AW,BC847AW
90
BC846BW,BC847BW,BC848BW 150
BC847CW,BC848CW
270
V
CE
=2V,I
C
=100mA
BC846AW,BC847AW
110
BC846BW,BC847BW,BC848BW 200
BC847CW,BC848CW
420
I
C
=10mA, I
B
= 0.5mA
I
C
=10mA, I
B
= 0.5mA
V
CE
=5V,I
C
=10mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
100
3
180
290
520
90
700
220
450
800
250
mV
V
MHz
pF
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
MIN
80
50
30
65
45
30
6
6
5
15
100
TYP
MAX
UNIT
V
V
V
nA
nA
DC current gain
h
FE
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Transition frequency
Collector capacitance
V
CE(sat)
V
BE(sat)
f
T
C
C
Document number: BL/SSSTF045
Rev.A
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