BL
Galaxy Electrical
NPN
general purpose Transistor
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Collector-base breakdown voltage
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Production specification
BC846/847/848
unless otherwise specified
MIN
80
50
30
65
45
30
6
6
5
0.1
TYP MAX
UNIT
Symbol Test conditions
V
(BR)CBO
I
C
=10μA,I
E
=0
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=10mA,I
B
=0
B
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10μA,I
C
=0
V
CB
=70V,I
E
=0
V
CB
=50V,I
E
=0
V
CB
=30V,I
E
=0
V
CE
=60V,I
B
=0
V
CE
=45V,I
B
=0
V
CE
=30V,I
B
=0
B
B
B
V
Collector cut-off current
I
CBO
μA
Collector cut-off current
I
CEO
0.1
μA
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC846C,847C,848C
I
EBO
V
EB
=5V,I
C
=0
110
200
420
0.1
220
450
800
0.5
1.1
μA
h
FE
V
CE
=5V,I
C
=2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=100mA, I
B
=5mA
B
V
V
I
C
=100mA, I
B
=5mA
B
Transition frequency
f
T
V
CE
=5V, I
C
= 10mA
100
f=100MHz
MHz
Document number: BL/SSSTC043
Rev.A
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DIOTEC [ DIOTEC SEMICONDUCTOR ]
