General Purpose Transistors
Characteristics (T
j
= 25
/
C)
Min.
Collector saturation volt. – Kollektor-Sättigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
E
= 0, V
CB
= 30 V, T
j
= 150
/
C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
)
f = 200 Hz
V
CE
= 5 V, I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
f = 30 ... 15000 Hz
BC 846...
F
BC 848
BC 849/850
BC 849
BC 850
F
F
F
–
–
R
thA
–
f
T
C
CB0
C
EB0
100 MHz
–
–
I
EB0
–
–
I
CB0
I
CB0
–
–
–
–
V
BEon
V
BEon
580 mV
–
V
CEsat
V
CEsat
V
BEsat
V
BEsat
–
–
–
–
BC 846 ... BC 850
Kennwerte (T
j
= 25
/
C)
Typ.
90 mV
200 mV
700 mV
900 mV
660 mV
–
Max.
250 mV
600 mV
–
–
700 mV
770 mV
15 nA
5
:
A
100 nA
–
3.5 pF
9 pF
6 pF
–
Base saturation voltage – Basis-Sättigungsspannung
1
)
Collector-Base Capacitance – Kollektor-Basis-Kapazität
Emitter-Base Capacitance – Emitter-Basis-Kapazität
2 dB
1.2 dB
1.4 dB
1.4 dB
10 dB
4 dB
4 dB
3 dB
420 K/W
2
)
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 846A = 1A
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 847A = 1E
BC 848A = 1J
BC 856 ... BC 860
BC 846B = 1B
BC 847B = 1F
BC 848B = 1K
BC 849B = 2B
BC 850B = 2F
BC 847C = 1G
BC 848C = 1L
BC 849C = 2C
BC 850C = 2G
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
11
DIOTEC [ DIOTEC SEMICONDUCTOR ]
