BCP54 ... BCP56
BCP54 ... BCP56
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
3.5
±0.2
NPN
1.3 W
SOT-223
0.04 g
Version 2006-06-26
6.5
3
±0.2
±0.1
1.65
4
Type
Code
1
0.7
2.3
2
3.25
3
Dimensions - Maße [mm]
1=B
2/4 = C
3=E
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CEO
V
CBO
V
EBO
P
tot
I
C
I
CM
I
BM
T
j
T
S
7
±0.3
Grenzwerte (T
A
= 25°C)
BCP54
45 V
45 V
BCP55
60 V
60 V
5V
1.3 W
1
)
1A
1.5 A
200 mA
-55...+150°C
-55…+150°C
BCP56
80 V
100 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 150 mA
all groups
Group -6
Group -10
Group -16
all groups
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
BE
25
40
63
100
25
–
–
Kennwerte (T
j
= 25°C)
Typ.
Max.
–
–
–
–
–
–
100
160
250
–
0.5 V
1V
V
CE
= 2 V, I
C
= 500 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
2
)
I
C
= 500 mA, I
B
= 50 mA
1
2
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
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1
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