Darlington Transistors
BCV26, BCV46
Characteristics (T
j
= 25
/
C)
Min.
Base saturation voltage – Basis-Sättigungsspannung
1
)
- I
C
= 100 mA, - I
B
= 0.1 mA
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
V
BEsat
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
- V
BEon
f
T
–
4000
2000
10000
4000
20000
10000
–
–
R
thA
Kennwerte (T
j
= 25
/
C)
Typ.
–
–
–
–
–
–
–
–
220 MHz
Max.
1.5 V
–
–
–
–
–
–
1.4 V
–
420 K/W
2
)
BCV27, BCV47
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
- V
CE
= 5 V, - I
C
= 1 mA
- V
CE
= 5 V, - I
C
= 10 mA
- V
CE
= 5 V, - I
C
= 100 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 10 mA
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking – Stempelung
Pinning – Anschlußbelegung
BCV26 = FD
3
BCV46 = FE
3
T1
T2
1
2
1
2
1
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
7
DIOTEC [ DIOTEC SEMICONDUCTOR ]
