MMBT2369 / MMBT2369A
MMBT2369 / MMBT2369A
NPN
Version 2006-06-02
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
1.3
±0.1
1.1
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Type
Code
1
1.9
2
2.5 max
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
E open
C open
V
CES
V
CEO
V
CBO
V
EBO
P
tot
I
C
T
j
T
S
Grenzwerte (T
A
= 25°C)
MMBT2369
40 V
15 V
40 V
4.5 V
250 mW
1
)
200 mA
-55...+150°C
-55…+150°C
MMBT2369A
15 V
15 V
40 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
I
C
= 10 mA, V
CE
= 1 V
I
C
= 100 mA, V
CE
= 2 V
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
10 mA,
10 mA,
10 mA,
30 mA,
100 mA,
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
CE
=
1V
0.35 V
0.35 V, T
j
= -55°C
0.4 V
1V
MMBT2369
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
CEsat
V
CEsat
V
CEsat
40
20
–
40
20
30
20
–
–
–
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
Max.
120
–
120
–
–
–
–
0.25 V
0.20 V
0.30 V
0.25 V
0.50 V
MMBT2369A
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
I
C
= 10 mA,
I
C
I
C
I
C
I
C
=
=
=
=
10 mA,
10 mA,
30 mA,
100 mA,
I
B
= 1 mA
I
B
=
I
B
=
I
B
=
I
B
=
1 mA
1 mA, T
j
= 125°C
3 mA
10 mA
MMBT2369
MMBT2369A
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
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1
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