MMBT5550 / MMBT5551
Characteristics (T
j
= 25°C)
Min.
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
V
BEsat
V
BEsat
V
BEsat
V
BEsat
I
CBO
I
CBO
I
CBO
I
CBO
I
EBO
f
T
C
CBO
C
EBO
MMBT5550
MMBT5551
F
F
R
thA
–
–
–
–
–
–
–
–
–
100 MHz
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
< 420 K/W
1
)
MMBT5400 / MMBT5401
MMBT5550 = 1F
MMBT5551 = 3S
1.0 V
1.0 V
1.2 V
1.0 V
100 nA
50 nA
100 µA
50 µA
50 nA
300 MHz
6 pF
30 pf
10 dB
8 dB
Kennwerte (T
j
= 25°C)
Typ.
Max.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 100 V, (E open)
V
CB
= 120 V, (E open)
V
CB
= 100 V, T
j
= 100°C, (E open)
V
CB
= 120 V, T
j
= 100°C, (E open)
V
EB
= 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
I
C
= 10 mA, V
CE
= 10 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200 µA, R
G
= 2 kΩ,
f = 30 Hz ... 15 kHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
Emitter-Base cutoff current – Emitter-Basis-Reststrom
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
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© Diotec Semiconductor AG
2
DIOTEC [ DIOTEC SEMICONDUCTOR ]
