MPSA42 / MPSA43
MPSA42 / MPSA43
NPN
Version 2005-06-17
Power dissipation
Verlustleistung
E BC
High voltage Si-epitaxial planar transistors
Hochspannungs-Si-Epitaxial Planar-Transistoren
NPN
625 mW
TO-92
(10D3)
0.18 g
16
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
9
18
2 x 2.54
Dimensions / Maße [mm]
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
Collector-Base-voltage - Kollektor-Basis-Spannung
Emitter-Base-voltage - Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CEO
V
CBO
V
EBO
P
tot
I
C
I
B
Grenzwerte (T
A
= 25°C)
MPSA42
300 V
300 V
6V
625 mW
1
)
500 mA
100 mA
-65...+150°C
-65…+150°C
MPSA43
200 V
200 V
T
j
T
S
Characteristics (T
j
= 25°C)
Min.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 200 V
I
E
= 0, V
CB
= 160 V
Emitter-Base cutoff current – Emitterreststrom
I
B
= 0, V
EB
= 6 V
I
B
= 0, V
EB
= 4 V
MPSA42
MPSA43
MPSA42
MPSA43
I
EB0
I
EB0
V
CEsat
V
CEsat
–
–
–
–
MPSA42
MPSA43
I
CB0
I
CB0
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
Max.
100 nA
100 nA
100 nA
100 nA
500 mV
400 mV
Collector saturation voltage – Kollektor-Sättigungsspannung
2
)
I
C
= 20 mA, I
B
= 2 mA
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case
Gültig, wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis
≤
2%
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1
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