PN2907 / PN2907A
PN2907 / PN2907A
PNP
Version 2006-09-12
Power dissipation
Verlustleistung
CBE
Si-Epitaxial Planar Switching Transistors
Si-Epitaxie-Planar-Schalttransistoren
PNP
625 mW
TO-92
(10D3)
0.18 g
16
Plastic case
Kunststoffgehäuse
18
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
9
Grenzwerte (T
A
= 25°C)
PN2907
(2N2907)
PN2907A
(2N2907A)
60 V
60 V
5V
625 mW
)
600 mA
-55...+150°C
-55…+150°C
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CEO
- V
CBO
- V
EBO
P
tot
- I
C
T
j
T
S
40 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
)
- I
C
= 0.1 mA, - V
CE
= 10 V
- I
C
= 1 mA, - V
CE
= 10 V
- I
C
= 10 mA, - V
CE
= 10 V
- I
C
= 500 mA, - V
CE
= 10 V
- I
C
= 150 mA, - V
CE
= 10 V
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
PN2907
PN2907A
PN2907
PN2907A
PN2907
PN2907A
PN2907
PN2907A
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
- V
CEsat
- V
CEsat
35
75
50
100
75
100
30
50
100
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
–
–
–
–
–
Max.
–
–
–
–
–
–
–
–
300
0.4 V
1.6 V
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
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1
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