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1N5402 参数 Datasheet PDF下载

1N5402图片预览
型号: 1N5402
PDF下载: 下载PDF文件 查看货源
内容描述: 通用硅整流 [GENERAL PURPOSE SILICON RECTIFIER]
分类和应用: 二极管
文件页数/大小: 2 页 / 650 K
品牌: DIOTECH [ DIOTECH COMPANY. ]
 浏览型号1N5402的Datasheet PDF文件第2页  
1N5400 THRU 1N5408
Reverse Voltage - 50 to 1000 Volts
GENERAL PURPOSE SILICON RECTIFIER
Forward Current - 3.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-201AD
1.0 (25.4)
MIN.
0.220 (5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
Case
: JEDEC DO-201AD molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.04 ounce, 1.10 grams
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
1N 1N
1N
1N
1N
1N 1N
1N
5400 5401 5402 5403 5404 5405 5406 5407 5408
UNITS
V
V
V
A
A
V
µA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
JA
T
J
,
T
STG
50
35
50
100 200 300 400 500
70 140 210 280 350
100 200 300 400 500
3.0
200
1.1
5.0
100
30.0
20.0
-65 to +150
600 800 1000
420 560 700
600 800 1000
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted