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1N5821 参数 Datasheet PDF下载

1N5821图片预览
型号: 1N5821
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒整流器 [SCHOTTKY BARRIER RECTIFIER]
分类和应用: 二极管
文件页数/大小: 2 页 / 633 K
品牌: DIOTECH [ DIOTECH COMPANY. ]
 浏览型号1N5821的Datasheet PDF文件第2页  
1N5820 THRU 1N5822
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts
Forward Current - 3.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Guardring for overvoltage protection
Low power loss,high erriciency
High current capability,low forward voltage drop
High surge capability
For use in low voltage,high frequency inverters,
free wheeling,and polarity protection applications
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-201AD
1.0 (25.4)
MIN.
0.220 (5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
0.052 (1.3)
0.048 (1.2)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
L
=95 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N5820
1N5821
1N5822
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
20
14
20
30
21
30
3.0
80.0
40
28
40
0.475
0.500
2.0
20.0
300.0
40.0
-65 to +125
0.525
V
mA
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted