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HER106 参数 Datasheet PDF下载

HER106图片预览
型号: HER106
PDF下载: 下载PDF文件 查看货源
内容描述: 高产高效硅整流 [HIGH EFFICIENT SILICON RECTIFIER]
分类和应用: 二极管
文件页数/大小: 2 页 / 790 K
品牌: DIOTECH [ DIOTECH COMPANY. ]
 浏览型号HER106的Datasheet PDF文件第2页  
HER101 THRU HER108
Reverse Voltage - 50 to 1000 Volts
HIGH EFFICIENT SILICON RECTIFIER
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ultra fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-41
1.0 (25.4)
MIN.
0.107(2.7)
0.080(2.0)
DIA.
MECHANICAL DATA
Case
: JEDEC DO-41 molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.012 ounce, 0.33 grams
0.205(5.2)
0.166(4.2)
1.0 (25.4)
MIN.
0.034(0.9)
0.028(0.7)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
HER
101
50
35
HER
102
100
70
HER
103
200
140
HER
104
300
210
1.0
HER
105
400
280
HER
106
600
420
HER
107
800
560
HER
108
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
50
20
1.0
30
1.3
5.0
100
75
15
-65 to +150
-65 to +150
1.7
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.