DOMINANT
TM
Semiconductors
Innovating Illumination
Gap : DDx-GJS
Electrical Characteristics at Ta=25˚C
Chip Type
GaP
Vf @ If = 20mA
Typ. (V)
2.2
V
r @
I
r
= 10
µ
A
Min(V)
5
Max. (V)
2.6
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Vf Binning (Optional)
Vf Bin @ 20mA
01
02
03
04
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Please consult sales and marketing for special part number to incorporate Vf bining.
Forward Voltage (V)
1.55 … 1.85
1.85 … 2.15
2.15 … 2.45
2.45 … 2.75
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
ESD Thereshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
30
500
5
2
100
-40 … +100
-40 … +100
75
Unit
mA
mA
V
kV
˚C
˚C
˚C
mW
4
06/09/2005 V4.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
