TM
DOMINANT
Colored Resin : DDx-xJE
Semiconductors
Innovating Illumination
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
AlInGaP: 30; InGaN: 20
mA
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
AlInGaP: 1000; InGaN: 200
mA
V
5
2000
ESD threshold (HBM)
V
LED junction temperature
Operating temperature
125
˚C
˚C
˚C
mW
-40 … +100
-40 … +100
AlInGaP: 75; InGaN: 85
Storage temperature
Power dissipation (at room temperature)
23/04/2007 V5.0
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