TM
DOMINANT
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=25˚C
Vf @ If = 20mA
Vr @ Ir = 10uA
Min. (V)
Part Number
Typ. (V)
Max. (V)
DDH-CJS, DDS-CJS, DDR-CJS, DDA-CJS,
DDO-CJS, DDY-CJS, DDG-CJS
1.9
1.8
2.1
2.3
12
12
12
DDS-SJS, DDR-SJS, DDA-SJS, DDO-SJS,
DDY-SJS, DDG-SJS, DDP-SJS
2.3
2.6
DDR-TJS, DDY-TJS
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Vf Binning (Optional)
Vf Bin @ 20mA
Forward Voltage (V)
1.55 … 1.85
01
1.85 … 2.15
2.15 … 2.45
2.45 … 2.75
02
03
04
Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Please consult sales & marketing for special part number to incorporate Vf binning.
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
30
mA
DDx-SJS/DDx-TJS :
DDx-CJS :
Peak pulse current;
1000
500
mA
(tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
12
V
KV
˚C
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
2
125
-40 … +100
-40 … +100
75
˚C
˚C
Power dissipation (at room temperature)
Thermal resistance
mW
- Junction / ambient, R
500
280
K/W
K/W
th JA
- Junction / solder point, R
th JS
2
(Mounting on FR4 PCB, pad size >= 16 mm per pad)
07/06/2007 V10.0
6
DOMINANT [ DOMINANT SEMICONDUCTORS ]
