DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN : DDx-xJx
Electrical Characteristics at Ta=25
0
C
Part Number
DDC, DDB
DDT
Vf @ If = 20 mA
Min. (V)
2.9
2.9
Typ. (V)
3.2
3.4
Max. (V)
3.8
4.0
Vr @ Ir = 10
µA
Min. (V)
5.0
5.0
Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.
Absolute Maximum Ratings
Maximum Value
DC Forward Current
Peak Pulse Current; (tp ≤ 10µs, Duty cycle = 0.005)
20
DDB = 300
DDC, DDT = 400
Reverse Voltage
ESD Threshold (HBM)
LED Junction Temperature
Operating Temperature
Storage Temperature
Power Dissipation (at room temperature)
Thermal Resistance Junction/Solder Point
5
2
125
-40 … +100
-40 … +100
85
230
V
kV
˚C
˚C
˚C
mW
K/W
Unit
mA
mA
5
07/05/2007 V12.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
