TM
DOMINANT
InGaN White : DDW-xJD
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=250C
Vf @ If = 20 mA
Typ. (V)
Vr @ Ir = 10 µA
Part Number
Min. (V)
Min. (V)
Max. (V)
DDW-xJD
2.9
3.2
3.8
5.0
Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.
Vf Bining (Optional)
Vf Bin @ 20 mA
Forward Voltage (V)
2.75 ... 3.05
0A
00
01
3.05 ... 3.35
3.35 ... 3.65
3.65 ... 3.95
02
Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.
Please consult sales and marketing for special part number to incorporate Vf bining.
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
20
200
mA
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse Voltage
mA
V
5
ESD Threshold (HBM)
2000
V
LED juction temperature
125
˚C
˚C
˚C
mW
Operating temperature
-40 … +100
-40 … +100
85
Storage temperature
Power dissipation (at room temperature)
28/09/2005 V2.0
3
DOMINANT [ DOMINANT SEMICONDUCTORS ]
