DOMINANT
TM
Semiconductors
Innovating Illumination
GaP : DDx-GJS-I2
Electrical Characteristics at Ta=25˚C
Part Number
DDR-GJ, DDO-GJ, DDY-GJ, DDG-GJ
Vf @ If = 2mA
Typ. (V)
1.80
Vr @ I
r
= 10
µ
A
Min (V)
100µA
Max. (V)
2.30
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1)
Reverse voltage
ESD Thereshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
30
100
12
2
125
-40 … +100
-40 … +100
75
Unit
mA
mA
V
kV
˚C
˚C
˚C
mW
4
25/07/2006 V2.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
