DOMINANT
TM
Semiconductors
Innovating Illumination
Bi-Color
Relative Intensity Vs Forward Current (InGaN)
2.2
2
1.8
Relative Intensity Vs Forward Current (AS AllnGaP)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Relative Intensity
Relative Intensity
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Forward Current, mA
Forward Current, mA
Forward Current Vs Forward Voltage (AS AllnGaP)
35
30
Forward Current Vs Forward Voltage (InGaN)
90
80
Forward Current, mA
Forward Current, mA
25
20
15
10
5
0
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
70
60
50
40
30
20
10
0
1
1.5
2
2.5
3
3.5
4
4.5
5
Forward Voltage, V
Forward Voltage, V
Maximum Current Vs Temperature
35
30
AllnGaP
InGaN
Radiation Pattern
30°
20°
10°
0°
1.0
Forward Current, mA
40°
25
20
15
10
5
0
0
10
20
30
0.8
AlInGaP
50°
0.6
InGaN
60°
70°
80°
90°
0.4
0.2
0
40
50
60
70
80
90 100
Ambient Temperature
5
19/07/2007 V19.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
