DOMINANT
TM
Semiconductors
Innovating Illumination
AlInGaP : DWx-EJS
Relative Luminous Intensity Vs Forward Current
Relative Intensity
Relative Intensity; Normalized at 50mA
1.6
1.4
Forward Current Vs Forward Voltage
2.3
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
70
80
Forward Voltage, V
1.2
2.2
2.1
2
1.9
1.8
0
20
40
60
80
Forward Current, mA
Forward Current, mA
Maximum Current Vs Temperature
Allowable Forward Current, mA
0
10
20
30
40
50
60
70
80
90 100
80
70
Allowable Forward Current Vs Duty Ratio
Allowable Forward Current Vs Duty Ratio
(Ta=25 Deg C, Tp<10us)
1000
Forward Current, mA
60
50
40
30
20
10
0
100
10
1
1
10
100
Ambient Temperature
Duty Ratio, %
Radiation Pattern
30°
20°
10°
0°
1.0
40°
0.8
50°
0.6
60°
70°
80°
90°
0.4
0.2
0
5
25/06/2007 V5.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
