DOMINANT
TM
Semiconductors
Innovating Illumination
AlInGaP : DWx-EJS
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R
th JA
- Junction / solder point, R
th JS
(Mounting on FR4 PCB, pad size >= 16 mm
2 per pad)
300
130
K/W
K/W
70
100
12
2000
125
-40 … +100
-40 … +100
200
Unit
mA
mA
V
V
˚C
˚C
˚C
mW
Characteristics (Ta = 25˚C)
Symbol
Temperature coefficient of
dom (typ)
I
F
= 50mA; 0 ˚C <= T <= 100 ˚C
TC
dom (typ)
Part Number
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
Value
0.05
0.05
0.07
0.07
0.09
-2.2
-4.8
-2.4
-1.2
-1.3
-6.0
-7.4
-11.5
-15.7
-19.0
Unit
nm / K
Temperature coefficient of V
F (typ)
I
F
= 50mA; 0 ˚C <= T <= 100 ˚C
TC
V
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
mV / K
Temperature coefficient of I
V (typ)
I
F
= 50mA; 0 ˚C <= T <= 100 ˚C
TC
IV
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
mcd / K
4
25/06/2007 V5.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
