TM
DOMINANT
AlInGaP : DWx-EJS
Semiconductors
Innovating Illumination
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
70
mA
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
100
12
mA
V
ESD threshold (HBM)
2000
V
LED junction temperature
Operating temperature
125
˚C
˚C
˚C
mW
-40 … +100
-40 … +100
200
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R
300
130
K/W
K/W
th JA
- Junction / solder point, R
th JS
2
(Mounting on FR4 PCB, pad size >= 16 mm per pad)
Characteristics (Ta = 25˚C)
Symbol
Part Number
Value
Unit
Odom (typ)
I = 50mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of
TC
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
0.05
0.05
0.07
0.07
0.09
nm / K
O
dom (typ)
F
mV / K
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
-2.2
-4.8
-2.4
-1.2
-1.3
Temperature coefficient of V
TC
F (typ)
I = 50mA; 0 ˚C <= T <= 100 ˚C
V
F
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
TC
-6.0
-7.4
mcd / K
IV
Temperature coefficient of I
V (typ)
I = 50mA; 0 ˚C <= T <= 100 ˚C
F
-11.5
-15.7
-19.0
25/06/2007 V5.0
4
DOMINANT [ DOMINANT SEMICONDUCTORS ]
