DCR1002SF
10000
Conditions: I
T
= 1000A, V
R
= –100V,
T
j
= 125˚C
Q
S
is total integral stored charge
10000
Conditions: I
T
= 1000A, V
R
= –100V,
T
j
= 125˚C
Max I
RR
Max Q
S
Reverse recovery current, I
RR
- (A)
Total stored charge, Q
S
- (µC)
Min I
RR
1000
Min Q
S
1000
I
T
Q
S
dI/dt
100
0.1
I
RR
1.0
10
100
100
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
100
Fig.5 Reverse recovery current
0.1
Pulse width
µs
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
50
-
400
150
125
100
25
-
Table gives pulse power P
GM
in Watts
Thermal Impedance - Junction to case (˚C/W)
10
Anode side cooled
50
20
W
10
W
0W
W
5W
Gate trigger voltage, V
GT
- (V)
10
Double side cooled
pe
Up
1
rl
t9
imi
5%
0.01
T
j
= 125˚C
V
GD
Low
e
i
r lim
t 5%
T
j
= 25˚C
T
j
= -40˚C
Region of certain
triggering
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.018
0.021
0.022
0.025
Anode side
0.036
0.038
0.040
0.043
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.1
0.001
0.01
0.1
1
10
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
Gate trigger current, I
GT
- (A)
Fig.6 Gate characteristics
Fig.6 Transient thermal impedance - junction to case
6/9
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