DCR1277SD
10000
Total stored charge Q
S
- (µC)
Conditions:
T
j
= 125˚C
Q
S
is total integral stored
charge
I
T
= 2000A
I
T
= 1000A
1000
I
T
Q
S
t
p
dI/dt
I
RM
100
0.1
1.0
10
100
Rate of decay of on-state current dI/dt - (A/µs)
Fig.3 Stored charge
100
Table gives pulse power P
GM
in Watts
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
400
100
50
150
150 150
125
150 150
100
150 150
25
150 100
-
-
20
5W
2W
T
j
= 25˚C
it 9
lim
r
9%
V
FGM
100W
50W
20W
10W
Gate trigger voltage V
GT
- (V)
10
pe
Up
T
j
= 125˚C
T
j
= -40˚C
1
r
Lowe
limit 1
%
0.1
0.001
0.01
0.1
Gate trigger current I
GT
- (A)
Fig.4 Gate characteristics
1
10
I
FGM
6/9