DCR1478SY
100000
I
T
Q
S
t
p
dI/dt
I
RM
100
Table gives pulse power P
GM
in Watts
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
50
100
400
150
150
150
150
150
125
150
150
100
150
100
25
20
-
-
V
FGM
Total stored charge, Q
S
- (µC)
Gate trigger voltage, V
GT
- (V)
10
100W
50W
20W
10W
5W
2W
I
T
= 1400A
10000
1
Lo
lim
wer
it 1%
Conditions:
Q
S
is total integral stored charge
T
j
= 125˚C
1000
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/µs)
100
0.1
0.001
0.01
0.1
1
Gate trigger current, I
GT
- (A)
10
Fig.4 Stored charge
50
Fig.5 Gate characteristics
0.1
T
j
= 125˚C
T
j
= 25˚C
T
j
= -40˚C
er
pp
U
lim
it 9
9%
I
2
t = Î
2
x t
2
Peak half sine wave on-state current - (kA)
Anode side cooled
40
Thermal impedance - (˚C/W)
0.01
Double side cooled
30
2.5
I
2
t value - (A
2
s x 10
6
)
20
I
2
t
2.0
0.001
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
10
1.5
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
0.1
1
Time - (s)
10
100
0
1
ms
10
1
2 3 45
10
1.0
20 30 50
Cycles at 50Hz
Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RSM
at T
case
= 125˚C)
6/8
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