DCR1575SY
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C.
From 67% V
DRM
to 2x I
T(AV)
Gate source 20V, 20Ω
t
r
< 0.5µs.
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 30V, 15Ω
Rise time 0.5µs, T
j
= 25
o
C
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, R
g - k
=
∞
Repetitive 50Hz
Non-repetitive
Typ.
-
-
-
-
-
-
-
550
150
Max.
300
1000
150
300
0.94
0.24
2.5
1000
300
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
mA
mA
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
I
L
I
H
t
q
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Turn-off time
I
T
= 800A, t
p
= 1ms, T
j
= 125˚C,
V
RM
= 50V, dI
RR
/dt = 20A/µs,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/µs linear
1.2
-
ms
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table, gate characteristics curve
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.0
300
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
4/8
www.dynexsemi.com
DYNEX [ Dynex Semiconductor ]
