DCR1576SY
100000
1000
Conditions:
T
j
= 125˚C, V
R
= 1600V,
I
T
= 2000A
Snubber 1µF, 11 Ohms
100
Table gives pulse power P
GM
in Watts
Pulse Width
µs
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Stored charge, Q
S
- (µC)
10000
Min. I
RR
Max. Q
S
Gate trigger voltage, V
GT
- (V)
Max. I
RR
100
Reverse recovery current, I
RR
- (A)
10
Min. Q
S
2W
T
j
= 125˚C
50W
20W
10W
5W
1000
I
T
Q
S
t
p
= 2ms
dI/dt
10
1
Up
r
pe
Li
t9
mi
9%
T
j
= -40˚C
%
T
j
= 25˚C
Low
i
er L
mit
1
100
0.1
1
1.0
100
10
Rate of decay of on-state current, dI/dt - (A/µs)
I
RM
0.1
0.001
0.01
0.1
1.0
Gate trigger current, I
GT
- (A)
10
Fig.4 Stored charge
Fig.5 Gate characteristics
0.1
0.1000
Single side cooled
Single side cooled
Thermal impedance, R
th(j-c)
- ˚C/W
0.01
Double side cooled
Thermal impedance R
th(j-hs)
- (˚C/W)
0.0100
Double side cooled
0.001
Conduction
Effective thermal resistance
Junction to case - ˚C/W
Double
sided
Single
sided
0.019
0.020
0.0207
0.0234
0.0010
Conduction
Effective Thermal Resistance
Junction to heatsink - ˚C/W
Double
Sided
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0115
0.0125
0.0132
0.0159
Single
Sided
0.0230
0.0240
0.0247
0.0274
d.c.
half wave
3 phase 120˚
6 phase 60˚
0.0095
0.0105
0.0112
0.0139
0.0001
0.001
0.01
0.1
1.0
Time - (s)
10
100
0.0001
0.001
0.01
0.1
1.0
Time - (s)
10
100
Fig.6 Transient thermal impedance - junction to case
Fig.7 Transient thermal impedance - junction to heatsink
6/9
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