DCR1674SZ
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C, gate open circuit.
From 67% V
DRM
to 1100A
Gate source 1A
t
r
= 0.5µs, T
j
= 125
o
C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 20V, 10Ω
t
r
= 0.5µs, T
j
= 25
o
C
Repetitive 50Hz
Non-repetitive
Typ.
-
-
-
-
-
-
-
Max.
500
1000
150
300
0.95
0.138
2.5
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
Threshold voltage
On-state slope resistance
Delay time
I
T
= 5000A, t
p
= 3ms, T
j
= 125˚C,
t
q
Turn-off time
V
R
= 200V, dI
RR
/dt = -5A/µs,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/µs linear
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, R
g-k
=
∞
-
900
µs
I
L
I
H
Latching current
Holding current
-
-
650
220
mA
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table, gate characteristics curve
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.5
500
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
4/8
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