DCR1674SZ
10000
T
j
= 125˚C
100
Table gives pulse power P
GM
in Watts
Pulse Width
µs
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
V
FGM
Recovered charge, Q
r
- (µC)
Gate trigger voltage, V
GT
- (V)
I
T
= 3000A
100W
50W
20W
10W
10
1000
1
U
pp
L
er
im
it
99
%
T
j
= 25˚C
V
GD
w
Lo
I
GD
er
it 1
Lim
%
100
1
10
Rate of decay of on-state current, dI/dt - (A/µs)
100
0.1
0.001
I
FGM
0.01
0.1
1.0
Gate trigger current, I
GT
- (A)
10
Fig.4 Recovered charge
200
0.1
Fig.5 Gate characteristics
20
Peak half sinewave on-state current - (kA)
150
15
Ivt value for fusing - (A
2
s x 10
6
)
Anode side cooled
Thermal impedance - (˚C/W)
0.01
Double side cooled
I
2
t
100
10
0.001
50
5
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0.0001
0.001
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0
1
100
10
ms
1
5
10
0
50
0.01
0.1
Time - (s)
1
10
Cycles at 50Hz
Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
= 125˚C)
6/8
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