DCR604SE
10000
Conditions:
T
j
= 125˚C
V
R
= 50V
t
p
= 1ms
100
Table gives pulse power P
GM
in Watts
Pulse width
µs
20
25
100
500
1ms
10ms
Frequency Hz
400
50
100
100
100
100
100
100
100
100
100
100
25
100
100
12.5
100
50
-
10
-
10
0W
50
20
W
W
10
Gate trigger voltage, V
GT
- (V)
Recovered charge, Q
R
- (µC)
5W
W
I
T
= 1500A
I
T
= 500A
10
1000
Upp
imi
er l
t 95
%
1
Region of certain
triggering
Q
R
t
p
dI
T
/dt
I
RM
0.25xI
RM
V
GD
Lo
lim
wer
it 5%
100
0.1
1.0
10
Rate of decay of on-state current, dI
T
/dt - (A/µs)
100
0.1
0.001
0.01
T
j
= 125˚C
0.1
T
j
= 25˚C
T
j
= -40˚C
I
T
1
Gate trigger current, I
GT
- (A)
10
I
FGM
Fig.4 Recovered charge
0.1
Fig.5 Gate characteristics
20
I
2
t = Î
2
x t
2
Anode side cooled
Thermal Impedance - junction to case - (˚C/W)
Peak half sine wave on-state current - (kA)
Double side cooled
15
225
I
2
t value - (A
2
s x 10
3
)
0.01
10
200
I
2
t
5
175
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.041
0.044
0.051
0.061
Anode side
0.074
0.077
0.084
0.093
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
0
1
ms
10
1
2 3 45
10
150
20 30 50
Cycles at 50Hz
Duration
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
6/8
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
125˚C)
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